FDS4435BZ

MOSFET 30V.PCH POWER TRENCH MOSFET

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FDS4435BZ Picture
SeekIC No. : 00152258 Detail

FDS4435BZ: MOSFET 30V.PCH POWER TRENCH MOSFET

floor Price/Ceiling Price

US $ .28~.48 / Piece | Get Latest Price
Part Number:
FDS4435BZ
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

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  • 25~100
  • 100~250
  • Unit Price
  • $.48
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  • $.28
  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 8.8 A
Resistance Drain-Source RDS (on) : 0.016 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 8.8 A
Resistance Drain-Source RDS (on) : 0.016 Ohms


Features:

• 8.8 A, 30 V. RDS(ON) = 20 mΩ @     VGS = 10 V
                           RDS(ON) = 35 mΩ @     VGS = 4.5 V
• Extended VGSS range (25V) for battery applications
• HBM ESD protection level of ±4.5 kV typical (note 3)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Termination is Lead-free and RoHS compliant



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS


Drain-Source Voltage

-30

V
VGSS
Gate-Source Voltage
±25
V
ID
Drain Current Continuous (Note 1a)
Pulsed
-8.8
A
-50

PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
2.5
W
1.2
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +175
°C



Description

This FDS4435BZ P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

This device FDS4435BZ is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.


Parameters:

Technical/Catalog InformationFDS4435BZ
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C8.8A
Rds On (Max) @ Id, Vgs20 mOhm @ 8.8A, 10V
Input Capacitance (Ciss) @ Vds 1845pF @ 15V
Power - Max1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs40nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS4435BZ
FDS4435BZ
FDS4435BZDKR ND
FDS4435BZDKRND
FDS4435BZDKR



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