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FDS4435

MOSFET SO-8 P-CH -30V

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SeekIC No. : 00160646 Detail

FDS4435: MOSFET SO-8 P-CH -30V

FDS4435 Data Sheet

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Part Number:
FDS4435
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/4

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : - 8.8 A
Resistance Drain-Source RDS (on) : 0.02 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : - 8.8 A
Resistance Drain-Source RDS (on) : 0.02 Ohms


Parameters:

Technical/Catalog InformationFDS4435
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C8.8A
Rds On (Max) @ Id, Vgs20 mOhm @ 8.8A, 10V
Input Capacitance (Ciss) @ Vds 1604pF @ 15V
Power - Max1W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs24nC @ 5V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS4435
FDS4435
FDS4435CT ND
FDS4435CTND
FDS4435CT



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