FDS4410A

MOSFET LOGIC LEVEL PO SINGLE NCH

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SeekIC No. : 00159042 Detail

FDS4410A: MOSFET LOGIC LEVEL PO SINGLE NCH

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US $ .17~.21 / Piece | Get Latest Price
Part Number:
FDS4410A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.0135 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 10 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.0135 Ohms


Features:

10 A, 30 V. RDS(ON) = 13.5 mΩ @ VGS = 10 V
                     
RDS(ON) = 20 mΩ @ VGS = 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely low  RDS(ON)
High power and current handling capability




Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
10 A
50
PD Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
2.5 W
10
TJ, Tstg Operating and Storage Junction Temperature Range 55 to +150  
Thermal Characteristics      
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
50 °C/W
125
RJC Thermal Resistance, Junction-to-Case (Note 1) -55 to +150 °C



Description

This FDS4410A N-Channel Logic Level MOSFET is produced using Fair- child Semiconductor's  advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices FDS4410A are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




Parameters:

Technical/Catalog InformationFDS4410A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs13.5 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 1205pF @ 15V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs16nC @ 5V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS4410A
FDS4410A



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