FDS4072N3

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Triple Source
Resistance Drain-Source RDS (on) : 0.012 Ohms
Continuous Drain Current : 12.4 A


Features:

 12.4 A, 40 V  R_DS(ON)  = 12 m @ V_GS  = 4.5 V 
                         R_DS(ON)  = 10 m @ V_GS   = 10 V 
 GS High performance trench technology for extremely low R_DS(ON)
 High power and current handling capability 
Fast switching 
FLMP SO-8 package:  Enhanced thermal performance in industry-standard package size


Application

Synchronous rectifier 
DC/DC converter


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	40	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current - Continuou   (Note 1a) - Pulse	12.4	A
		60
PD	Power Dissipation               (Note 1a)                                             (Note 1b)	3.0	W
		1.5
TJ,TSTG	Operating and Storage Junction Temperature Range	-55 to +15

Description

This FDS4072N3 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for "low side"synchronous rectier operation, providing an extremely low R_DS(ON)in a small package.



Parameters:

Technical/Catalog Information	FDS4072N3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	12.4A
Rds On (Max) @ Id, Vgs	10 mOhm @ 13.7A, 10V
Input Capacitance (Ciss) @ Vds	4299pF @ 20V
Power - Max	1.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	46nC @ 4.5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS4072N3 FDS4072N3 FDS4072N3TR ND FDS4072N3TRND FDS4072N3TR