MOSFET SO-8
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3 A | ||
Resistance Drain-Source RDS (on) : | 0.125 Ohms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Symbol | Parameter |
Ratings |
Units |
VDSS | Drain-Source Voltage |
100 |
V |
VGSS | Gate-Source Voltage |
± 20 | |
ID |
Drain Current Continuous (Note 1a) Pulsed |
3 |
A |
20 | |||
PD |
Power Dissipation for Dual Operation |
2 |
W |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
1.6 | ||
1.0 | |||
0.9 | |||
TJ, TSTG | Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
These FDS3912 N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETs FDS3912 feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Technical/Catalog Information | FDS3912 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 3A |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 3A, 10V |
Input Capacitance (Ciss) @ Vds | 632pF @ 50V |
Power - Max | 900mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 20nC @ 10V |
Package / Case | SO-8 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS3912 FDS3912 |