FDS3680

MOSFET SO-8 N-CH 100V

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FDS3680 Picture
SeekIC No. : 00161722 Detail

FDS3680: MOSFET SO-8 N-CH 100V

floor Price/Ceiling Price

Part Number:
FDS3680
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5.2 A
Resistance Drain-Source RDS (on) : 0.032 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 5.2 A
Resistance Drain-Source RDS (on) : 0.032 Ohms


Features:

• 5.2 A, 100 V. RDS(ON) = 0.043 @ VGS = 10 V
                        RDS(ON) = 0.048 @ VGS = 6 V.
• Low gate charge.
• Fast switching speed
• High performance trench technology for extremely low RDS(ON) .
• High power and current handling capability.



Pinout

  Connection Diagram


Specifications

Symbol Parameter
Ratings
Units
VDSS Drain-Source Voltage
100
V
VGSS Gate-Source Voltage
± 20
ID

Drain Current Continuous (Note 1a)
                Pulsed
5.2
A
50
PD

Power Dissipation for Single Operation (Note 1a)
                                            (Note 1b)
                                            (Note 1c)
2.5
W
1.2
1.0
TJ, TSTG Operating and Storage Junction Temperature Range
55 to +150
°C



Description

This FDS3680 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETs FDS3680 feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDS3680
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C5.2A
Rds On (Max) @ Id, Vgs46 mOhm @ 5.2A, 10V
Input Capacitance (Ciss) @ Vds 1735pF @ 50V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs53nC @ 10V
Package / CaseSO-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS3680
FDS3680



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