MOSFET SSOT-8 P-CH -30V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 8 A | ||
Resistance Drain-Source RDS (on) : | 0.019 Ohms | Configuration : | Single Quint Drain Dual Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-8 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
-30 |
V |
VGSS |
Gate-Source Voltage |
±20 |
V |
ID |
Draint Current - Continuous (Note 1) |
-8 |
A |
- Pulsed |
-50 | ||
PD |
Maximum Power Dissipation (Note 1a) |
1.8 |
W |
(Note 1b) |
1 | ||
(Note 1c) |
0.9 | ||
TJ, TSTG |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
The SuperSOT-8 family of P-Channel Logic Level MOSFETs FDR858P have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.
This FDR858P P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These FDR858P devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Technical/Catalog Information | FDR858P |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 8A |
Rds On (Max) @ Id, Vgs | 19 mOhm @ 8A, 10V |
Input Capacitance (Ciss) @ Vds | 2010pF @ 15V |
Power - Max | 900mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 30nC @ 5V |
Package / Case | SSOT-8 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDR858P FDR858P FDR858PTR ND FDR858PTRND FDR858PTR |