FDR844P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.007 Ohms
Package / Case : SSOT-8
Configuration : Single Quint Drain Dual Source


Features:

• 10 A, 20 V. RDS(ON) = 11 m @ VGS = 4.5 V
                          RDS(ON) = 14 m @ VGS = 2.5 V
                           RDS(ON) = 20 m @VGS = 1.8 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability


Application

• Power management
• Load switch
• Battery protection


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±8	V
ID	Draint Current - Continuous (Note 1)	-10	A
	- Pulsed	-50
PD	Maximum Power Dissipation (Note 1a)	1.8	W
	(Note 1b)	1.0
	(Note 1c)	0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This FDR844P P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications


Parameters:

Technical/Catalog Information	FDR844P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	11 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds	4951pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	74nC @ 4.5V
Package / Case	SSOT-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDR844P FDR844P