MOSFET USE 512-FDQ7238S Notebook Power
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 14 A | ||
Resistance Drain-Source RDS (on) : | 0.0095 Ohms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SO-14 | Packaging : | Reel |
Symbol |
Parameter |
Q2 |
Q1 |
Units |
VDSS |
Drain-Source Voltage |
30 |
30 |
V |
VGSS |
Gate-Source Voltage |
±16 |
±16 |
V |
ID |
Drain Current Continuous (Note 1a) Pulsed |
14 |
11 |
A |
50 |
50 | |||
PD |
Power Dissipation for Single Operation (Note 1a & 1b) (Note 1c & 1d) |
2.4 |
1.8 |
W |
1.3 |
1.1 | |||
TJ,TSTG |
Operating and Storage Junction Temperature Range |
55to+150 |
°C |
The FDQ7244S is designed to replace two single SO-8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild's SyncFET TM technology.