FDPF10N50FT

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.85 Ohms


Specifications

      

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDPF10N50FT	Full Production	RoHS Compliant	$1.10	TO-220F	3	RAIL	N/A	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: FDPF Line 3: 10N50FT

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDPF10N50FT is available. Click here for more information .

Description

These FDPF10N50FT N-Channel enhancement mode power field effect transistorsare produced using Fairchild?s proprietary, planar stripe,DMOS technology.

This advance technology has been especially tailored to minimizeon-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche andcommutation mode. These devices FDPF10N50FT are well suited for high efficientswitching mode power supplies and active power factorcorrection.

Parameters:

Technical/Catalog Information	FDPF10N50FT
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	850 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	1170pF @ 25V
Power - Max	42W
Packaging	Tube
Gate Charge (Qg) @ Vgs	24nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDPF10N50FT FDPF10N50FT