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FDP8876

MOSFET 30V N-Channel PowerTrench MOSFET

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SeekIC No. : 00152437 Detail

FDP8876: MOSFET 30V N-Channel PowerTrench MOSFET

FDP8876 Data Sheet

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Part Number:
FDP8876
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 0.0105 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 0.0105 Ohms


Parameters:

Technical/Catalog InformationFDP8876
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C70A
Rds On (Max) @ Id, Vgs8.7 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 1700pF @ 15V
Power - Max70W
PackagingTube
Gate Charge (Qg) @ Vgs45nC @ 10V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP8876
FDP8876



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