FDP75N08

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 75 V
Package / Case : TO-220
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.011 Ohms


Features:

• 75A, 75V, R_DS(on) = 0.011 @V_GS = 10 V
• Low gate charge ( typical 150 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Parameter		Symbol	Limit	Unit
Drain-source voltage		VDSS	75	V
Gate-source voltage		VGSS	75
Drain current - Continuous (TC = 25°C) - Continuous (TC = 100°C)		ID	75	A
			47.7
Drain Current - Pulsed (Note 1)		IDM	±20
Drain power dissipation Tc = 25°C	Power Dissipation (TC = 25°C)	PD	131	W
	- Derate above 25°C		1	W/°C
Single pulse avalanche energy (Note 2)		EAS	1164	mJ
Avalanche current(Note 1)		IAR	75	A
Repetitive avalanche energy (Note 1)		EAR	13.1	mJ
Peak Diode Recovery dv/dt (Note 3)		dv/dt	4.5	V/ns
Operating temperature		Tj	-55~150	°C
Storage temperature range		Tstg	-55~150	°C
Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds		TL	300	°C

1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 138H, I_AS = 75A, V_DD = 50V, R_G = 25 , Starting T_J = 25°C
3. I_SD 75A, di/dt 200A/s, V_DD BV_DSS, Starting T_J = 25°C


Description

These FDP75N08 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices FDP75N08 are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology

Parameters:

Technical/Catalog Information	FDP75N08
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	11 mOhm @ 37.5A, 10V
Input Capacitance (Ciss) @ Vds	4468pF @ 25V
Power - Max	137W
Packaging	Tube
Gate Charge (Qg) @ Vgs	104nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP75N08 FDP75N08