FDP603AL

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Continuous Drain Current : 33 A
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

*33 A, 30 V. R_DS(ON)  = 0.022 @  V_GS =10 V                         
                    R_DS(ON)  = 0.036 @  V_GS =4.5 V.      
*Critical DC electrical parameters specified at elevated temperature.
*Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
*High density cell design for extremely low R_DS(ON) .
*175°C maximum junction temperature rating.


Specifications

Symbol	Parameter	FDP603AL	FDB603AL	Units
VDSS	Drain-Source Voltage	30		V
VGSS	Gate-Source Voltage - Continuous	±20		V
ID	Drain Current - Continuous                        - Pulsed                             (Note 1)	33		A
		100
PD	Total Power Dissipation @ TC = 25	50		W
	Derate above 25	0.33		W/
TJ, TSTG	Operating and Storage Temperature Range	-65 to 175
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	275

Description

  These FDP603AL N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.  These devices FDP603AL are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.