Position: Home  > All Categories> Integrated Circuits (ICs) > FDP2552

FDP2552

MOSFET 150V N-Ch UltraFET Trench

product image

FDP2552 Picture
See larger image
SeekIC No. : 00153660 Detail

FDP2552: MOSFET 150V N-Ch UltraFET Trench

FDP2552 Data Sheet

floor Price/Ceiling Price

US $ .98~1.52 / Piece | Get Latest Price
Part Number:
FDP2552
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.52
  • $1.38
  • $1.11
  • $.98
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 37 A
Resistance Drain-Source RDS (on) : 0.032 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 37 A
Resistance Drain-Source RDS (on) : 0.032 Ohms


Features:

*rDS(ON)  = 32m (Typ.), VGS = 10V, ID = 16A 
*Qg (tot) = 39nC (Typ.), VGS = 10V
* Low Miller Charge
*Low QRR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101
  Formerly developmental type 82869


Application

* DC/DC Converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V Systems
* High Voltage Synchronous Rectifier
* Direct Injection / Diesel Injection Systems
* 42V Automotive Load Control
* Electronic Valve Train Systems


Specifications

Symbol Parameter Ratings Units
VDSS
 Drain to Source Voltage 150
 V
VGS
 Gate to Source Voltage ±20 V
ID
 Drain Current
Continuous (TC = 25, VGS = 10V) 		 37 A
Continuous (TC = 100, VGS = 10V) 26 A
Continuous (Tamb = 25, VGS = 10V) with RJA = 43/W 5 A
Pulsed Figure 4 A
EAS
 Single Pulse Avalanche Energy (Note 1) 390 mJ
PD
 Power dissipation 150 W
Derate above 25 1.0
W/
TJ , TSTG
 		 Operating and Storage Temperature -55 to 175



Parameters:

Technical/Catalog InformationFDP2552
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C37A
Rds On (Max) @ Id, Vgs36 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 2800pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs51nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP2552
FDP2552



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Test Equipment
TOP853
TOP2005
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Prototyping Products
AVT4168
DE1
Transformers
TM-09210
BV222-1-00992
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Cable Assemblies
CS1W-CN114
XW2Z-500T
View more