Position: Home  > All Categories> Integrated Circuits (ICs) > FDP16AN08A0

FDP16AN08A0

MOSFET 75V 58a 0.016 Ohms/VGS=10V

product image

FDP16AN08A0 Picture
See larger image
SeekIC No. : 00148427 Detail

FDP16AN08A0: MOSFET 75V 58a 0.016 Ohms/VGS=10V

FDP16AN08A0 Data Sheet

floor Price/Ceiling Price

US $ .7~1.01 / Piece | Get Latest Price
Part Number:
FDP16AN08A0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.01
  • $.9
  • $.79
  • $.7
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/30

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 58 A
Resistance Drain-Source RDS (on) : 0.013 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 75 V
Continuous Drain Current : 58 A
Resistance Drain-Source RDS (on) : 0.013 Ohms


Features:

*rDS(ON)  = 13m (Typ.), VGS = 10V, ID = 58A 
*Qg (tot) = 28nC (Typ.), VGS = 10V
* Low Miller Charge
* Low Qrr Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101
Formerly developmental type 82660


Application

* 42V Automotive Load Control
* Starter / Alternator Systems
* Electronic Power Steering Systems
* Electronic Valve Train Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V systems


Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 75 V
VGS Gate to Source Voltage ±20
V
ID Drain Current
Continuous (TC = 25, VGS = 10V) 		 58 A
Continuous (TC = 100, VGS = 10V) 44  
Continuous (Tamb = 25, VGS= 10V, with RJA = 43/W) 9 A
Pulsed Figure 4 A
EAS Single Pulse Avalanche Energy (Note 1) 117 mJ
PD Power dissipation 135 W
Derate above 25 0.9 W/
TJ , TSTG Operating and Storage Temperature -55 to 175



Parameters:

Technical/Catalog InformationFDP16AN08A0
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C58A
Rds On (Max) @ Id, Vgs16 mOhm @ 58A, 10V
Input Capacitance (Ciss) @ Vds 1857pF @ 25V
Power - Max135W
PackagingTube
Gate Charge (Qg) @ Vgs42nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP16AN08A0
FDP16AN08A0



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
RF and RFID
X3C26P1-30S
1P620S
Memory Cards, Modules
WT32
VTL5C7
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Circuit Protection
A50QS75-4Y
F-17*77
Switches
US32DMRJ
HBGQ22P-11ET
View more