FDP150N10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 57 A
Resistance Drain-Source RDS (on) : 0.012 Ohms


Specifications

      

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDP150N10	Full Production	RoHS Compliant	$2.16	TO-220	3	RAIL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: FDP Line 3: 150N10

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDP150N10 is available. Click here for more information .

Description

This FDP150N10 N-Channel MOSFET is produced using FairchildSemiconductor's advanced PowerTrench process that has beenespecially tailored to minimize the on-state resistance and yetmaintain superior switching performance.

Parameters:

Technical/Catalog Information	FDP150N10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	57A
Rds On (Max) @ Id, Vgs	15 mOhm @ 49A, 10V
Input Capacitance (Ciss) @ Vds	4760pF @ 25V
Power - Max	110W
Packaging	Tube
Gate Charge (Qg) @ Vgs	69nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP150N10 FDP150N10