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FDP120AN15A0

MOSFET 150V 14a 0.120 Ohms/VGS=10V

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SeekIC No. : 00160730 Detail

FDP120AN15A0: MOSFET 150V 14a 0.120 Ohms/VGS=10V

FDP120AN15A0 Data Sheet

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Part Number:
FDP120AN15A0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.101 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.101 Ohms


Features:

• rDS(ON) = 101mΩ (Typ.), VGS = 10V, ID = 4A
• Qg(tot) = 11.2nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101


Application

• DC/DC Converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems


Specifications

Symbol
Parameter
Ratings
Units
VDSS Drain to Source Voltage
150
V
VGS Gate to Source Voltage
±20
V
ID Drain Current
Continuous (TC=25, VGS = 10V)
14
A
Continuous (TC =100, VGS =10V)
9.7
A
Continuous (Tamb = 25, VGS = 10V, RJA = 52/W)
2.8
A
Pulsed
Figure 4
A
EAS Single Pulse Avalanche Energy (Note 1)
122
mJ
PD Power dissipation
65
W
Derate above 25
0.43
W/
TJ, TSTG Operating and Storage Temperature
-55 to 175



Parameters:

Technical/Catalog InformationFDP120AN15A0
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs120 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 770pF @ 25V
Power - Max65W
PackagingTube
Gate Charge (Qg) @ Vgs14.5nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP120AN15A0
FDP120AN15A0



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