FDP047N10, US $ 2.16-2.93 , Fairchild Semiconductor, FDP047N10 DataSheet download, circuit diagram from SeekIC.com

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FDP047N10: MOSFET 100V N-Channel PowerTrench

FDP047N10 Data Sheet

US $ 2.16~2.93 / Piece | Get Latest Price

Part Number:: FDP047N10
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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$2.93
$2.63
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Upload time: 2024/12/30

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Recent History
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MOSFET 60V N-Channel PowerTrench

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	164 A
Resistance Drain-Source RDS (on) :	0.0047 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-220AB	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 164 A
Resistance Drain-Source RDS (on) : 0.0047 Ohms

Parameters:

Technical/Catalog Information	FDP047N10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	120A
Rds On (Max) @ Id, Vgs	4.7 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	15265pF @ 25V
Power - Max	375W
Packaging	Tube
Gate Charge (Qg) @ Vgs	210nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP047N10 FDP047N10

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FDP047N10

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