FDN372S

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 40 mOhms
Package / Case : SuperSOT
Continuous Drain Current : 2.6 A


Features:

• 2.6 A, 30 V.    R_DS(ON) = 40 mΩ @ V_GS = 10 V
                         R_DS(ON) = 50 mΩ @ V_GS = 4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)


Application

• DC-DC Converter
• Motor Drives


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGS	Gate-Source Voltage	±16	V
ID	Drain Current Continuous                (Note 1a)                            Pulsed	2.6	A
		10
PD	Power Dissipation for Single Operation(Note 1a)                                                              (Note 1b)	0.5	W
		0.46
TJ, TSTG	Operating and Storage Temperature	-55 to 175

Notes:
1. R_JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_JC is guaranteed by design while R_CA is determined by the user's board design.
a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a minimum pad.


Description

The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds(on) and low gate charge. The FDN372S includes an integrated Schottky diode using Fairchild Semiconductor's monolithic SyncFET process, making it ideal as the low side switch in a synchronous converter.

Parameters:

Technical/Catalog Information	FDN372S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	2.6A
Rds On (Max) @ Id, Vgs	40 mOhm @ 2.6A, 10V
Input Capacitance (Ciss) @ Vds	630pF @ 15V
Power - Max	460mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	8.1nC @ 5V
Package / Case	SSOT-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN372S FDN372S