MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET
FDN361BN: MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 1.4 A | ||
Resistance Drain-Source RDS (on) : | 110 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SuperSOT | Packaging : | Reel |
Technical/Catalog Information | FDN361BN |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 1.4A |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 1.4A, 10V |
Input Capacitance (Ciss) @ Vds | 193pF @ 15V |
Power - Max | 460mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 1.8nC @ 4.5V |
Package / Case | SuperSOT?-3 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDN361BN FDN361BN FDN361BNCT ND FDN361BNCTND FDN361BNCT |