FDN360P

MOSFET SSOT-3 P-CH -30V

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SeekIC No. : 00147250 Detail

FDN360P: MOSFET SSOT-3 P-CH -30V

floor Price/Ceiling Price

US $ .16~.28 / Piece | Get Latest Price
Part Number:
FDN360P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Processing time
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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 63 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SuperSOT Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 63 mOhms
Package / Case : SuperSOT


Features:

* -2 A, -30 V. R DS(on)   = 0.080 @ VGS  = -10 V
 
                      R DS(on) = 0.125 @ VGS = -4.5 V.
 
* Low gate charge (5nC typical).
* Fast switching speed.
* High performance trench technology for extremely  low R DS(ON)
* High power and current handling capability.



Application

* DC/DC converter
* Load switch
* Motor drives



Specifications

 

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

-30

V

VGSS

Gate-Source Voltage

±20

V

ID

Drain Current  - Continuous            (Note 1a)

              - Pulsed

-2

A

-20

PD

Power Dissipation for Single Operation (Note 1a)

                                       (Note1b)

0.5

W

0.46

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150




Description

This FDN360P P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These FDN360P devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




Parameters:

Technical/Catalog InformationFDN360P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2A
Rds On (Max) @ Id, Vgs80 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 298pF @ 15V
Power - Max460mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs9nC @ 10V
Package / CaseSSOT-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDN360P
FDN360P
FDN360PTR ND
FDN360PTRND
FDN360PTR



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