MOSFET SSOT-3 P-CH -30V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2 A | ||
Resistance Drain-Source RDS (on) : | 63 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SuperSOT | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
-30 |
V |
VGSS |
Gate-Source Voltage |
±20 |
V |
ID |
Drain Current - Continuous (Note 1a) - Pulsed |
-2 |
A |
-20 | |||
PD |
Power Dissipation for Single Operation (Note 1a) (Note1b) |
0.5 |
W |
0.46 | |||
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
|
This FDN360P P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These FDN360P devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Technical/Catalog Information | FDN360P |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 2A |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 2A, 10V |
Input Capacitance (Ciss) @ Vds | 298pF @ 15V |
Power - Max | 460mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 9nC @ 10V |
Package / Case | SSOT-3 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDN360P FDN360P FDN360PTR ND FDN360PTRND FDN360PTR |