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FDN359BN

MOSFET 30V N-Channel PowerTrench MOSFET

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SeekIC No. : 00159606 Detail

FDN359BN: MOSFET 30V N-Channel PowerTrench MOSFET

FDN359BN Data Sheet

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Part Number:
FDN359BN
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2.7 A
Resistance Drain-Source RDS (on) : 46 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SuperSOT Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 2.7 A
Package / Case : SuperSOT
Resistance Drain-Source RDS (on) : 46 mOhms


Parameters:

Technical/Catalog InformationFDN359BN
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.7A
Rds On (Max) @ Id, Vgs46 mOhm @ 2.7A, 10V
Input Capacitance (Ciss) @ Vds 650pF @ 15V
Power - Max460mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs7nC @ 5V
Package / CaseSSOT-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDN359BN
FDN359BN
FDN359BNDKR ND
FDN359BNDKRND
FDN359BNDKR



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