FDN352AP

MOSFET SINGLE PCH TRENCH MOSFET

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SeekIC No. : 00147875 Detail

FDN352AP: MOSFET SINGLE PCH TRENCH MOSFET

floor Price/Ceiling Price

US $ .12~.26 / Piece | Get Latest Price
Part Number:
FDN352AP
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Processing time
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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 1.3 A
Resistance Drain-Source RDS (on) : 0.18 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SuperSOT Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Resistance Drain-Source RDS (on) : 0.18 Ohms
Gate-Source Breakdown Voltage : +/- 25 V
Package / Case : SuperSOT
Continuous Drain Current : 1.3 A


Features:

1.3 A, 30V R DS(ON) = 180m @ VGS = 10V
   1.1 A, 30V R DS(ON) = 300 m@ VGS = 4.5V
High performance trench technology for extremely low R DS(ON)
High power version of industry Standard SOT-23 package. dentical pin-out to SOT-23 with 30% higher power handling capability.



Application

Notebook computer power management


Specifications

 

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

-30

V

VGSS

Gate-Source Voltage

±25

V

ID

Drain Current  - Continuous                  (Note 1a)
  - Pulsed

-1.3

A

-10

PD

Power Dissipation for Single Operation (Note 1a)
  (Note 1b)

0.5

W

0.46

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150




Description

This FDN352AP P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices FDN352AP are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.
 


Parameters:

Technical/Catalog InformationFDN352AP
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C1.3A
Rds On (Max) @ Id, Vgs180 mOhm @ 1.3A, 10V
Input Capacitance (Ciss) @ Vds 150pF @ 15V
Power - Max460mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs1.9nC @ 4.5V
Package / CaseSuperSOT?-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDN352AP
FDN352AP
FDN352APCT ND
FDN352APCTND
FDN352APCT



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