FDN338P

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 1.6 A
Package / Case : SuperSOT
Resistance Drain-Source RDS (on) : 0.115 Ohms


Features:

-1.6 A, -20 V, R _DS(ON)= 0.13 @ V _GS = -4.5 V
                        R _DS(ON) = 0.18 @ V _GS= -2.5 V.
Industry standard outline SOT-23 surface mount package using proprietary SuperSOT^TM -3 design for superior thermal and electrical capabilities.
High density cell design for extremely low R _DS(ON)
Exceptional on-resistance and maximum DC current capability.


Specifications

 

Symbol	Parameter	FDN338P	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain/Output Current      - Continuous                                        - Pulsed	-1.6	A
		-5
PD	Maximum Power Dissipation             (Note 1a)                                                          (Note 1b)	0.5	W
		0.46
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

Description

SuperSOT^TM-3  P-Channel logic level enhancement mode power field effect transistors FDN338P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices FDN338P are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and  other battery powered circuits where fast  switching, and low in-line power loss are needed in a very small outline surface mount package.


Parameters:

Technical/Catalog Information	FDN338P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.6A
Rds On (Max) @ Id, Vgs	115 mOhm @ 1.6A, 4.5V
Input Capacitance (Ciss) @ Vds	451pF @ 10V
Power - Max	460mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	6.2nC @ 4.5V
Package / Case	SSOT-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN338P FDN338P FDN338PCT ND FDN338PCTND FDN338PCT