FDN337N

MOSFET SSOT-3 N-CH 30V

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SeekIC No. : 00147305 Detail

FDN337N: MOSFET SSOT-3 N-CH 30V

floor Price/Ceiling Price

US $ .13~.28 / Piece | Get Latest Price
Part Number:
FDN337N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 100~250
  • Unit Price
  • $.28
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  • Processing time
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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 2.2 A
Resistance Drain-Source RDS (on) : 0.065 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SuperSOT Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Resistance Drain-Source RDS (on) : 0.065 Ohms
Continuous Drain Current : 2.2 A
Package / Case : SuperSOT


Features:

2.2 A,  30 V,  R DS(ON) = 0.065 @ V GS = 4.5 V               
                       R DS(ON)  = 0.082 @ VGS  = 2.5 V.
Industry  standard outline SOT-23 surface mount package  using  proprietary SuperSOTTM -3 design for superior thermal and electrical capabilities.
High density cell design for extremely low R DS(ON)
Exceptional on-resistance and maximum DC current capability.



Specifications

 

Symbol

Parameter

FDN337N

Units

VDSS

Drain-Source Voltage

30

V

VGSS

Gate-Source Voltage

±8

V

ID

Drain Current  - Continuous               
                       - Pulsed

2.2

A

10

PD

Maximum Power Dissipation            (Note 1a)
                                                        (Note 1b)

0.5

W

0.46

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150




Description

SuperSOTTM -3  N-Channel logic level enhancement mode power field effect transistors FDN337N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices FDN337N are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and   other battery powered circuits where fast  switching, and low in-line power loss are needed in a very small outline surface mount package.



Parameters:

Technical/Catalog InformationFDN337N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.2A
Rds On (Max) @ Id, Vgs65 mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) @ Vds 300pF @ 10V
Power - Max460mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs9nC @ 4.5V
Package / CaseSSOT-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDN337N
FDN337N
FDN337NTR ND
FDN337NTRND
FDN337NTR



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