FDN335N

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 1.7 A
Package / Case : SuperSOT
Resistance Drain-Source RDS (on) : 0.055 Ohms


Features:

* 1.7 A, 20 V. R _DS(ON) = 0.07 @ V_GS = 4.5 V
                      R _DS(ON)  = 0.100 @  V_GS = 2.5 V.

* Low gate charge (3.5nC typical).
* High performance trench technology for extremely low R _DS(ON)
* High power and current handling capability.


Application

* DC/DC converter
* Load switch


Specifications

 

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current  - Continuous                  (Note 1a)   - Pulsed	1.7	A
		8
PD	Power Dissipation for Single Operation (Note 1a)   (Note 1b)	0.5	W
		0.46
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

Description

This FDN335N N-Channel 2.5V specified MOSFET  is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.


Parameters:

Technical/Catalog Information	FDN335N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.7A
Rds On (Max) @ Id, Vgs	70 mOhm @ 1.7A, 4.5V
Input Capacitance (Ciss) @ Vds	310pF @ 10V
Power - Max	460mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	5nC @ 4.5V
Package / Case	SSOT-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN335N FDN335N FDN335NTR ND FDN335NTRND FDN335NTR