FDMB3800N

MOSFET 30V Dual N-Channel PwrTrch MOSFET

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SeekIC No. : 00146506 Detail

FDMB3800N: MOSFET 30V Dual N-Channel PwrTrch MOSFET

floor Price/Ceiling Price

US $ .36~.55 / Piece | Get Latest Price
Part Number:
FDMB3800N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.55
  • $.48
  • $.42
  • $.36
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.8 A
Resistance Drain-Source RDS (on) : 0.032 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : MicroFET Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 4.8 A
Configuration : Dual Dual Drain
Package / Case : MicroFET
Resistance Drain-Source RDS (on) : 0.032 Ohms


Parameters:

Technical/Catalog InformationFDMB3800N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C4.8A
Rds On (Max) @ Id, Vgs40 mOhm @ 4.8A, 10V
Input Capacitance (Ciss) @ Vds 465pF @ 15V
Power - Max750mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs5.6nC @ 5V
Package / CaseMicroFET-6
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDMB3800N
FDMB3800N
FDMB3800NTR ND
FDMB3800NTRND
FDMB3800NTR



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