MOSFET MLP 2X2 DUAL PCH POWER TRENCH
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 2.2 A | ||
Resistance Drain-Source RDS (on) : | 120 mOhms at 4.5 V | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | MicroFET | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
20 |
V |
VGSS |
Gate-Source Voltage |
±12 |
V |
ID |
Drain Current Continuous (Note 1a) Pulsed |
2.2 |
A |
6 | |||
PD |
Power Dissipation (Steady State) (Note 1a) (Note 1b) |
1.4 |
W |
0.7 | |||
TJ, TSTG |
Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
This FDMA1027P device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.
The FDMA1027P MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.
Technical/Catalog Information | FDMA1027P |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 P-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 2.2A |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 3A, 4.5V |
Input Capacitance (Ciss) @ Vds | 435pF @ 10V |
Power - Max | 1.4W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 6nC @ 4.5V |
Package / Case | Microfet 2x2 |
FET Feature | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDMA1027P FDMA1027P FDMA1027PDKR ND FDMA1027PDKRND FDMA1027PDKR |