FDM2452NZ

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 8.1 A
Resistance Drain-Source RDS (on) : 0.021 Ohms
Package / Case : MLP-6
Configuration : Dual Dual Source Common Drain


Features:

•  8.1 A, 30 V           R_DS(ON) =  21 mΩ @ V_GS = 4.5 V
                                R_DS(ON) =  25 mΩ @ V_GS = 2.5 V
•  ESD protection Diode(note 3)
•  Low Profile 0.8 mm maximum in the new
    package MicroFET 2 x 5 mm


Application

•  Li-Ion Battery Pack


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous         (Note 1a)                       Pulsed	8.1	A
		30
PD	Power Dissipation (Steady State) (Note 1a)                                                      (Note 1b)	2.2	W
		0.8
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDM2452NZ dual N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the R_DS(ON) @ V_GS = 2.5v on special MicroFET lead frame with all the drains on one side of the package.