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FDI3632

MOSFET 100V 80a 0.009 Ohms/VGS=10V

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FDI3632: MOSFET 100V 80a 0.009 Ohms/VGS=10V

FDI3632 Data Sheet

floor Price/Ceiling Price

US $ 1.51~2.29 / Piece | Get Latest Price
Part Number:
FDI3632
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.29
  • $1.84
  • $1.68
  • $1.51
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 7.5 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 7.5 mOhms


Features:

*rDS(ON)  = 7.5m (Typ.), VGS = 10V, ID  = 80A 
*Qg (tot) = 84nC (Typ.), VGS= 10V
* Low Miller Charge
*Low QRR  Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101


Application

* DC/DC converters and Off-Line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V Systems
* High Voltage Synchronous Rectifier
* Direct Injection / Diesel Injection Systems
* 42V Automotive Load Control
* Electronic Valve Train Systems


Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 100 V
VGS Gate to Source Voltage ±20
 V
ID Drain Current
Continuous (TC < 111, VGS = 10V)		 80 A
Continuous (Tamb = 25, VGS= 10V, RJA= 43/W) 12 A
Pulsed Figure 4 A
EAS Single Pulse Avalanche Energy (Note 1) 393 mJ
PD Power dissipation 310 W
Derate above 25 2.07 W/
TJ, TSTG Operating and Storage Temperature -55 to 175



Parameters:

Technical/Catalog InformationFDI3632
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs9 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 6000pF @ 25V
Power - Max310W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseTO-262AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDI3632
FDI3632



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