Position: Home  > All Categories> Integrated Circuits (ICs) > FDI3632

FDI3632

MOSFET 100V 80a 0.009 Ohms/VGS=10V

product image

FDI3632 Picture
See larger image
SeekIC No. : 00147150 Detail

FDI3632: MOSFET 100V 80a 0.009 Ohms/VGS=10V

FDI3632 Data Sheet

floor Price/Ceiling Price

US $ 1.51~2.29 / Piece | Get Latest Price
Part Number:
FDI3632
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.29
  • $1.84
  • $1.68
  • $1.51
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 7.5 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 7.5 mOhms


Features:

*rDS(ON)  = 7.5m (Typ.), VGS = 10V, ID  = 80A 
*Qg (tot) = 84nC (Typ.), VGS= 10V
* Low Miller Charge
*Low QRR  Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101


Application

* DC/DC converters and Off-Line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V Systems
* High Voltage Synchronous Rectifier
* Direct Injection / Diesel Injection Systems
* 42V Automotive Load Control
* Electronic Valve Train Systems


Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 100 V
VGS Gate to Source Voltage ±20
 V
ID Drain Current
Continuous (TC < 111, VGS = 10V)		 80 A
Continuous (Tamb = 25, VGS= 10V, RJA= 43/W) 12 A
Pulsed Figure 4 A
EAS Single Pulse Avalanche Energy (Note 1) 393 mJ
PD Power dissipation 310 W
Derate above 25 2.07 W/
TJ, TSTG Operating and Storage Temperature -55 to 175



Parameters:

Technical/Catalog InformationFDI3632
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs9 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 6000pF @ 25V
Power - Max310W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseTO-262AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDI3632
FDI3632



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Isolators
HCPL062N
HCPL316J
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Memory Cards, Modules
WT32
VTL5C7
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Audio Products
HUC1002
WM-64CT
Circuit Protection
A50QS75-4Y
F-17*77
View more