Features: • Low Gate Charge Qg results in Simple Drive Requirement• Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness• Reduced rDS(ON)• Reduced Miller Capacitance and Low Input Capacitance• Improved Switching Speed with Low EMI• 175°C Rated Junction T...
FDH20N40: Features: • Low Gate Charge Qg results in Simple Drive Requirement• Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness• Reduced rDS(ON)• Reduced Miller Capacitance ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol |
Parameter |
Ratings |
Units |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
400 ±30 20 14 80 273 1.82 -55 to 175 300 (1.6mm from case) 10ibf*in (1.1N*m) |
V V A A A W W/ |
ID |
Drain Current Continuous (TC = 25, VGS = 10V) Continuous (TC = 100, VGS = 10V) Pulsed (Note 1) | ||
PD |
Power dissipation Derate above 25 | ||
TJ, TSTG |
Operating and Storage Temperature Soldering Temperature for 10 seconds Mounting Torque, 8-32 or M3 Screw |