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FDG8842CZ

MOSFET Q1:30V/Q2: -25V Cmpl PowerTrench MOSFET

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SeekIC No. : 00148147 Detail

FDG8842CZ: MOSFET Q1:30V/Q2: -25V Cmpl PowerTrench MOSFET

FDG8842CZ Data Sheet

floor Price/Ceiling Price

US $ .17~.25 / Piece | Get Latest Price
Part Number:
FDG8842CZ
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.25
  • $.19
  • $.19
  • $.17
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 30 V, 25 V
Gate-Source Breakdown Voltage : +/- 12 V, - 8 V Continuous Drain Current : 750 mA, - 410 mA
Resistance Drain-Source RDS (on) : 400 mOhms at 4.5 V at N Channel, 1100 mOhms at 4.5 V at P Channel Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : SC-70-6
Drain-Source Breakdown Voltage : 30 V, 25 V
Gate-Source Breakdown Voltage : +/- 12 V, - 8 V
Continuous Drain Current : 750 mA, - 410 mA
Resistance Drain-Source RDS (on) : 400 mOhms at 4.5 V at N Channel, 1100 mOhms at 4.5 V at P Channel


Parameters:

Technical/Catalog InformationFDG8842CZ
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C410mA
Rds On (Max) @ Id, Vgs400 mOhm @ 750mA, 4.5V
Input Capacitance (Ciss) @ Vds 100pF @ 10V
Power - Max360mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs1.44nC @ 4.5V
Package / CaseSC-70-6
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG8842CZ
FDG8842CZ
FDG8842CZTR ND
FDG8842CZTRND
FDG8842CZTR



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