FDFMA3N109

MOSFET PowerTrench MOSFET and Schottky Diode

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SeekIC No. : 00150307 Detail

FDFMA3N109: MOSFET PowerTrench MOSFET and Schottky Diode

floor Price/Ceiling Price

US $ .2~.31 / Piece | Get Latest Price
Part Number:
FDFMA3N109
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.31
  • $.26
  • $.22
  • $.2
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 2.9 A
Resistance Drain-Source RDS (on) : 123 mOhms at 4.5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : MicroFET-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 2.9 A
Package / Case : MicroFET-6
Resistance Drain-Source RDS (on) : 123 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationFDFMA3N109
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.9A
Rds On (Max) @ Id, Vgs123 mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) @ Vds 220pF @ 15V
Power - Max650mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs3nC @ 4.5V
Package / CaseMicrofet 2x2
FET FeatureDiode (Isolated)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDFMA3N109
FDFMA3N109
FDFMA3N109CT ND
FDFMA3N109CTND
FDFMA3N109CT



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