FDD8882

MOSFET 30V N-Channel PowerTrench MOSFET

product image

FDD8882 Picture
SeekIC No. : 00148401 Detail

FDD8882: MOSFET 30V N-Channel PowerTrench MOSFET

floor Price/Ceiling Price

US $ .24~.37 / Piece | Get Latest Price
Part Number:
FDD8882
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.37
  • $.32
  • $.28
  • $.24
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 55 A
Resistance Drain-Source RDS (on) : 11.5 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Package / Case : TO-252
Continuous Drain Current : 55 A
Resistance Drain-Source RDS (on) : 11.5 mOhms


Features:

·rDS(ON) = 11.5mΩ, VGS = 10V, ID = 35A
·rDS(ON)  = 15mΩ, VGS = 4.5V, ID = 35A
·High performance trench technology for extremely low rDS(ON)
·Low gate charge
·High power and current handling capability



Application

·DC/DC converters


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20

55
50
12.6
Figure 4
41
55
0.37
-55 to 175
V
V

A
A
A
A
mJ
W
W/°C
°C
ID
Drain Current
Continuous (TC = 25°C, VGS = 10V) (Note 1)
Continuous (TC = 25°C, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W)
Pulsed
EAS
Single Pulse Avalanche Energy (Note 2)
PD
Power dissipation
Derate above 25°C
TJ,TSTG Operating and Storage Temperature

THERMAL CHARACTERISTICS
RJC
RJA
RJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
2.73
100
52
°C/W
°C/W
°C/W



Description

This FDD8882 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.




Parameters:

Technical/Catalog InformationFDD8882
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C55A
Rds On (Max) @ Id, Vgs11.5 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 1260pF @ 15V
Power - Max55W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs33nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD8882
FDD8882



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Motors, Solenoids, Driver Boards/Modules
Resistors
Power Supplies - Board Mount
Optical Inspection Equipment
Isolators
Hardware, Fasteners, Accessories
View more