MOSFET 25V N-Channel PowerTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 16.5 A | ||
Resistance Drain-Source RDS (on) : | 0.0085 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Reel |
Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing | Package Marking Convention** |
---|---|---|---|---|---|---|---|---|
FDD6780 | Full Production | RoHS Compliant | $0.56 | TO-252(DPAK) | 2 | TAPE REEL | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: FDD Line 3: 6780 |
* Fairchild 1,000 piece Budgetary Pricing |
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Package marking information for product FDD6780 is available. Click here for more information . |
This FDD6780 N-Channel MOSFET has been designed specifically toimprove the overall efficiency of DC/DC converters using eithersynchronous or conventional switching PWM controllers. It hasbeen optimized for low gate charge, low rDS(on) and fastswitching speed.
Technical/Catalog Information | FDD6780 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 16.5A |
Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 16.5A, 10V |
Input Capacitance (Ciss) @ Vds | 1590pF @ 13V |
Power - Max | 3.7W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 29nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDD6780 FDD6780 FDD6780TR ND FDD6780TRND FDD6780TR |