FDD6780

MOSFET 25V N-Channel PowerTrench

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SeekIC No. : 00163268 Detail

FDD6780: MOSFET 25V N-Channel PowerTrench

floor Price/Ceiling Price

Part Number:
FDD6780
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 16.5 A
Resistance Drain-Source RDS (on) : 0.0085 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Continuous Drain Current : 16.5 A
Resistance Drain-Source RDS (on) : 0.0085 Ohms


Specifications

      

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
FDD6780Full ProductionRoHS Compliant$0.56TO-252(DPAK)2TAPE REEL Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: FDD Line 3: 6780
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDD6780 is available. Click here for more information .



Description

This FDD6780 N-Channel MOSFET has been designed specifically toimprove the overall efficiency of DC/DC converters using eithersynchronous or conventional switching PWM controllers. It hasbeen optimized for low gate charge, low rDS(on) and fastswitching speed.




Parameters:

Technical/Catalog InformationFDD6780
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C16.5A
Rds On (Max) @ Id, Vgs8.5 mOhm @ 16.5A, 10V
Input Capacitance (Ciss) @ Vds 1590pF @ 13V
Power - Max3.7W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs29nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD6780
FDD6780
FDD6780TR ND
FDD6780TRND
FDD6780TR



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