MOSFET 30V N-Ch PowerTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 50 A | ||
Resistance Drain-Source RDS (on) : | 0.008 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252AA | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ± 16 50 13 100 52 3.8 1.6 55 to +175 |
V | |
ID |
Continuous Drain Current @TC=25°C @TA=25°C Pulsed |
(Note 3) |
A | |
PD |
Power Dissipation @TC=25°C @TA=25°C @TA=25°C |
(Note 1a) (Note 1b) (Note 1c) |
W | |
TJ, TSTG |
Operating and Storage Temperature Range |
°C |
This FDD6696 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Technical/Catalog Information | FDD6696 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 13A |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 13A, 10V |
Input Capacitance (Ciss) @ Vds | 1715pF @ 15V |
Power - Max | 1.6W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 24nC @ 5V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDD6696 FDD6696 |