FDD6688S

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 4 mOhms
Continuous Drain Current : 88 A
Package / Case : TO-252AA


Features:

• 88 A, 30 V. RDS(ON) = 5.1 mΩ @ VGS = 10 V RDS(ON) = 6.3 mΩ @ VGS = 4.5 V
• Low gate charge (31 nC typical)
• Fast switching
• High performance trench technology for extremely low RDS(ON)


Application

• DC/DC converter
• Motor Drives


Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ± 20 88 100 69 3.1 1.3 55 to +150	V
ID	Drain Current - Continuous - Pulsed	(Note 3) (Note 1a)		A
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)		W
TJ, TSTG	Operating and Storage Temperature Range			°C

Description

The FDD6688S is designed to replace a single TO-252 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6688S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.

Parameters:

Technical/Catalog Information	FDD6688S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	88A
Rds On (Max) @ Id, Vgs	5.1 mOhm @ 18.5A, 10V
Input Capacitance (Ciss) @ Vds	3290pF @ 15V
Power - Max	1.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	81nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6688S FDD6688S