MOSFET 30V P-Channel PowerTrench
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 40 A | ||
Resistance Drain-Source RDS (on) : | 0.02 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252AA | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ±25 40 11 100 52 3.8 1.6 55 to +175 |
V V | |
ID |
Continuous Drain Current @TC=25°C @TA=25°C Pulsed, PW £ 100µs |
(Note 3) (Note 1a) (Note 1b) |
A | |
PD |
Power Dissipation for Single Operation |
(Note 1) (Note 1a) (Note 1b) |
W | |
TJ, TSTG |
Operating and Storage Junction Temperature Range |
°C |
This FDD6685 P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).
Technical/Catalog Information | FDD6685 |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 11A |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 11A, 10V |
Input Capacitance (Ciss) @ Vds | 1715pF @ 15V |
Power - Max | 1.6W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 24nC @ 5V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDD6685 FDD6685 FDD6685CT ND FDD6685CTND FDD6685CT |