FDD6682

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 75 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 5.2 mOhms


Features:

75 A, 30 V  R_DS(ON) = 6.2 m@ V_GS = 10 V
                     R_DS(ON) = 8.0 m@ V_GS = 4.5 V 

Low gate charge 

Fast switching 

High performance trench technology for extremely
   low R_DS(ON)

Application

DC/DC converter

Motor Drives

Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 3)                         Pulsed       (Note 1a)	75	A
		100
PD	Power Dissipation for Single Operation (Note 1)                                                             (Note 1a)                                                              (Note 1b)	71	W
		3.8
		1.6
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

This FDD6682 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_{DS( ON)} and fast switching speed.

Parameters:

Technical/Catalog Information	FDD6682
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	6.2 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds	2400pF @ 15V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	31nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6682 FDD6682