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FDD6672A

MOSFET 30V N-Ch PowerTrench

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SeekIC No. : 00162351 Detail

FDD6672A: MOSFET 30V N-Ch PowerTrench

FDD6672A Data Sheet

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Part Number:
FDD6672A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 65 A
Resistance Drain-Source RDS (on) : 0.0082 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.0082 Ohms
Package / Case : TO-252AA
Continuous Drain Current : 65 A


Features:

· 65 A, 30 V. RDS(ON) = 9.5 mW @ VGS = 4.5 V RDS(ON) = 8 mW @ VGS = 10 V
· High performance trench technology for extremely low RDS(ON)
· Low gate charge (33 nC typical)
· High power and current handling capability


Application

· DC/DC converter


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
30
±12
65
100
70
3.2
1.3
-55 to +150
V
V
A

W


°C
ID
 Maximum Drain Current -Continuous
TA = 25		 (Note 1)
(Note 1a)
PD
 Maximum Power Dissipation TC = 25
TA = 25
TA = 25		 (Note 1)
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

This FDD6672A N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.




Parameters:

Technical/Catalog InformationFDD6672A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C65A
Rds On (Max) @ Id, Vgs8 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds 5070pF @ 15V
Power - Max1.3W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs46nC @ 4.5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD6672A
FDD6672A



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