MOSFET 30V N-Ch PowerTrench Logic Level
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 66 A | ||
Resistance Drain-Source RDS (on) : | 0.008 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252AB | Packaging : | Reel |
Symbol |
Parameter |
NDS9936 |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ±20 66 15 100 70 3.2 1.3 -55 to +150 |
V V A W °C | |
ID |
Maximum Drain Current -Continuous TA = 25oC |
(Note 1) (Note 1a) | ||
Maximum Drain Current -Pulsed | ||||
PD |
Maximum Power Dissipation TC = 25oC TA = 25oC TA = 25oC |
(Note 1) (Note 1a) (Note 1b) | ||
TJ,TSTG | Operating and Storage Junction Temperature Range |
RJC RJA |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1) (Note 1a) (Note 1b) |
1.8 40 96 |
°C/W °C/W °C/W |
This FDD6670A N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Technical/Catalog Information | FDD6670A |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 15A |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 1755pF @ 15V |
Power - Max | 1.3W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 22nC @ 5V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | FDD6670A FDD6670A FDD6670ATR ND FDD6670ATRND FDD6670ATR |