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FDD6632

MOSFET 30V 9a 0.090Ohms/VGS=10V

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SeekIC No. : 00159646 Detail

FDD6632: MOSFET 30V 9a 0.090Ohms/VGS=10V

FDD6632 Data Sheet

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Part Number:
FDD6632
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.07 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.07 Ohms
Package / Case : TO-252AA


Features:

• Fast switching
• rDS(ON) = 0.058Ω (Typ), VGS = 10V, ID = 9A
• rDS(ON) = 0.090Ω (Typ), VGS = 4.5V, ID = 6A
• Qg(TOT) (Typ) = 2.6nC, VGS = 5V
• Qgd (Typ) = 0.8nC
• CISS (Typ) = 255pF


Application

• DC/DC converters


Specifications

Symbol
Parameter
NDS9936
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
30
±20
9
6
4
Figure 4
15
0.1
-55 to 175
V
V
A
A
A
A
W
W/°C
°C
ID
 Drain Current
Continuous (TC = 25°C, VGS = 10V)
Continuous (TC = 100°C, VGS = 4.5V)
Continuous (TC = 25°C, VGS = 10V, RJA = 52°C/W)
Pulsed
PD
 Power dissipation
Derate above 25°C
TJ,TSTG Operating and Storage Temperature

THERMAL CHARACTERISTICS
RJC
RJA
RJA		 Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
10
100
52
 °C/W
°C/W
°C/W



Description

This FDD6632 device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

Formerly developmental type 83317




Parameters:

Technical/Catalog InformationFDD6632
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs70 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 255pF @ 15V
Power - Max15W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs4nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD6632
FDD6632



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