Position: Home  > All Categories> Integrated Circuits (ICs) > FDD6606

FDD6606

MOSFET 30V N-Ch PowerTrench

product image

FDD6606 Picture
See larger image
SeekIC No. : 00152030 Detail

FDD6606: MOSFET 30V N-Ch PowerTrench

FDD6606 Data Sheet

floor Price/Ceiling Price

US $ .59~1.15 / Piece | Get Latest Price
Part Number:
FDD6606
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.15
  • $.99
  • $.92
  • $.59
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.006 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.006 Ohms
Package / Case : TO-252AA


Features:

75 A, 30 V  R DS(ON) = 6 m@ VGS = 10 V 
   R DS(ON) = 8 m @ VGS = 4.5 V
Low gate charge
Fast switching
High performance trench technology for extremely
low RDS(ON)


Application

DC/DC converter 
Motor Drives


Pinout

Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current Continuous (Note 3) 
                       Pulsed       (Note 1a) 		75 A
100
PD Power Dissipation for Single Operation (Note 1)
                                                            (Note 1a)
                                                            (Note 1b) 		71 W
3.8
1.6
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +175 °C



Description

This FDD6606 N-Channel MOSFET has been designed  specifically to improve the overall efficiency of DC/DC  converters using either synchronous or conventional  switching PWM controllers. It has been optimized for  low gate charge, low RDS( ON) and fast switching speed. 
 




Parameters:

Technical/Catalog InformationFDD6606
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs6 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 15V
Power - Max1.6W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs31nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD6606
FDD6606



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
RF and RFID
X3C26P1-30S
1P620S
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Test Equipment
TOP853
TOP2005
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
View more