FDD2670

MOSFET N-CH 200V 18A Q-FET

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FDD2670 Picture
SeekIC No. : 00156757 Detail

FDD2670: MOSFET N-CH 200V 18A Q-FET

floor Price/Ceiling Price

US $ .55~.61 / Piece | Get Latest Price
Part Number:
FDD2670
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1730
  • 1730~2000
  • 2000~2500
  • 2500~5000
  • Unit Price
  • $.61
  • $.57
  • $.57
  • $.55
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.6 A
Resistance Drain-Source RDS (on) : 0.13 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 3.6 A
Resistance Drain-Source RDS (on) : 0.13 Ohms
Package / Case : TO-252AA


Features:

3.6 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
   low RDS(ON)
High power and current handling capability




Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 200 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current Continuous (Note 1)
Drain Current Pulsed
3.6 A
70
PD Maximum Power Dissipation @ TC = 25°C (Note 1)
                                           @ TA = 25°C (Note 1a)
                                           @ TA = 25°C (Note 1b)
3.2 W
1.3
3.2
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 °C



Description

This FDD2670 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


These MOSFETs FDD2670 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.


The result is a MOSFET FDD2670 that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDD2670
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C3.6A
Rds On (Max) @ Id, Vgs130 mOhm @ 3.6A, 10V
Input Capacitance (Ciss) @ Vds 1228pF @ 100V
Power - Max1.3W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs43nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD2670
FDD2670



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