FDD2572

MOSFET N-Ch Power Trench

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FDD2572 Picture
SeekIC No. : 00147197 Detail

FDD2572: MOSFET N-Ch Power Trench

floor Price/Ceiling Price

US $ .61~.85 / Piece | Get Latest Price
Part Number:
FDD2572
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.85
  • $.76
  • $.68
  • $.61
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 29 A
Resistance Drain-Source RDS (on) : 0.054 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 29 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.054 Ohms


Features:

• rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A
• Qg(tot) = 26nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101



Application

• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems



Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
150
±20

29
20
4
Figure 4
36
135
0.9
-55 to 175
V
V

A
A
A
A
mJ
W
W/°C
°C
ID
Drain Current
Continuous (TC = 25°C, VGS = 10V) (Note 1)
Continuous (TC = 200°C, VGS = 10V) (Note 1)
Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W)
Pulsed
EAS
Single Pulse Avalanche Energy (Note 2)
PD
Power dissipation
Derate above 25°C
TJ,TSTG Operating and Storage Temperature

THERMAL CHARACTERISTICS
RJC
RJA
RJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
1.11
100
52
°C/W
°C/W
°C/W



Parameters:

Technical/Catalog InformationFDD2572
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C29A
Rds On (Max) @ Id, Vgs54 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 1770pF @ 25V
Power - Max135W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs34nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD2572
FDD2572
FDD2572CT ND
FDD2572CTND
FDD2572CT



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