FDD2512

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 150 V
Resistance Drain-Source RDS (on) : 0.42 Ohms
Package / Case : TO-252AA
Continuous Drain Current : 6.7 A


Features:

6.7 A, 150 V  R_DS(ON) = 420 m @ V_GS = 10 V
                        R_DS(ON) = 470 m @ V_GS = 6 V
Low gate charge (8nC typical)

Fast switching
High performance trench technology for extremely
   low R_DS(ON)

Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	150	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 3)                        Pulsed       (Note 1a)	6.7	A
		20
PD	Power Dissipation (Note 1)                             (Note 1a)                             (Note 1b)	42	W
		3.8
		1.6
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDD2512 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  These MOSFETs FDD2512 feature faster switching and lower gate charge than other MOSFETs with comparable  R_DS(ON) specifications.  The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Parameters:

Technical/Catalog Information	FDD2512
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	6.7A
Rds On (Max) @ Id, Vgs	420 mOhm @ 2.2A, 10V
Input Capacitance (Ciss) @ Vds	344pF @ 75V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	11nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD2512 FDD2512