FDC855N

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain
Continuous Drain Current : 6.1 A
Resistance Drain-Source RDS (on) : 27 mOhms
Package / Case : SuperSOT-6


Parameters:

Technical/Catalog Information	FDC855N
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	6.1A
Rds On (Max) @ Id, Vgs	27 mOhm @ 6.1A, 10V
Input Capacitance (Ciss) @ Vds	655pF @ 15V
Power - Max	800mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC855N FDC855N FDC855NCT ND FDC855NCTND FDC855NCT