MOSFET 30V N-Ch PowerTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 12.5 A | ||
Resistance Drain-Source RDS (on) : | 0.0074 Ohms | Configuration : | Single Quint Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-6 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ± 20 12.5 40 2 1.1 −55 to +150 |
V A W °C | |
ID |
Drain Current Continuous Pulsed |
(Note 1a) | ||
PD |
Maximum Power Dissipation |
(Note 1a) (Note 1b) | ||
TJ, TSTG | Operating and Storage Junction Temperature Range |
This FDC796N N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Technical/Catalog Information | FDC796N |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 12.5A |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 12.5A, 10V |
Input Capacitance (Ciss) @ Vds | 1444pF @ 15V |
Power - Max | 1.1W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 20nC @ 5V |
Package / Case | SSOT-6 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDC796N FDC796N FDC796NDKR ND FDC796NDKRND FDC796NDKR |