MOSFET SSOT-6 N-CH 60V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4.3 A | ||
Resistance Drain-Source RDS (on) : | 0.055 Ohms | Configuration : | Single Quad Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-6 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
80 |
V |
VGSS |
Gate-Source Voltage |
± 20 |
V |
ID, |
Drain Current - Continuous (Note 1a) |
4.3 |
A |
Drain Current - Pulsed |
20 | ||
PD |
Power Dissipation for Single Operation (Note 1a)
(Note 1b) |
1.6 |
W |
0.8 | |||
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
This FDC5612 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These FDC5612 MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET FDC5612 that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Technical/Catalog Information | FDC5612 |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 4.3A |
Rds On (Max) @ Id, Vgs | 55 mOhm @ 4.3A, 10V |
Input Capacitance (Ciss) @ Vds | 650pF @ 25V |
Power - Max | 800mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 18nC @ 10V |
Package / Case | SSOT-6 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDC5612 FDC5612 FDC5612CT ND FDC5612CTND FDC5612CT |