FDC5612

MOSFET SSOT-6 N-CH 60V

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SeekIC No. : 00147630 Detail

FDC5612: MOSFET SSOT-6 N-CH 60V

floor Price/Ceiling Price

US $ .32~.54 / Piece | Get Latest Price
Part Number:
FDC5612
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Processing time
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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.3 A
Resistance Drain-Source RDS (on) : 0.055 Ohms Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Configuration : Single Quad Drain
Continuous Drain Current : 4.3 A
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.055 Ohms


Features:

• 4.3 A, 60 V.  R DS(ON)  = 0.055 W  @ VGS = 10 V
                       R DS(ON)  = 0.064 W  @ VGS =  6 V
• Low gate charge (12.5nC typical).
• Fast switching speed.
• High performance trench technology for extremely low  R DS(ON) 
• SuperSOTTM-6 package: small footprint (72% smaller  than standard SO-8); low profile (1mm thick).



Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
80
V
VGSS
Gate-Source Voltage
± 20
V
ID,
 Drain Current - Continuous  (Note 1a)
4.3
A
Drain Current - Pulsed
20
PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
1.6
W
0.8
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C



Description

This FDC5612 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These FDC5612 MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET FDC5612 that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDC5612
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C4.3A
Rds On (Max) @ Id, Vgs55 mOhm @ 4.3A, 10V
Input Capacitance (Ciss) @ Vds 650pF @ 25V
Power - Max800mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs18nC @ 10V
Package / CaseSSOT-6
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC5612
FDC5612
FDC5612CT ND
FDC5612CTND
FDC5612CT



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