MOSFET -35V P-Channel PowerTrench
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 35 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4.3 A | ||
Resistance Drain-Source RDS (on) : | 55 mOhms | Configuration : | Single Quad Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SuperSOT-6 | Packaging : | Reel |
Technical/Catalog Information | FDC365P |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 35V |
Current - Continuous Drain (Id) @ 25° C | 4.3A |
Rds On (Max) @ Id, Vgs | 55 mOhm @ 4.2A, 10V |
Input Capacitance (Ciss) @ Vds | 705pF @ 20V |
Power - Max | 800mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 15nC @ 10V |
Package / Case | SuperSOT-6 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDC365P FDC365P FDC365PTR ND FDC365PTRND FDC365PTR |